IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels
Online Presentations | 15 Jul 2021 | Contributor(s): Patrizio Graziosi, Neophytos Neophytou
In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.
IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials
Online Presentations | 14 Jul 2021 | Contributor(s): Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis
In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
Papers | 28 Jun 2013 | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
Online Presentations | 05 Aug 2010 | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
Online Presentations | 05 Aug 2010 | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate...
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