CNRS - Carbon Nanotube Interconnect RC Model

2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.

Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

2016-05-04 03:37:43 | Compact Models | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

2018-07-18 16:10:04 | Compact Models | Contributor(s): Rongmei Chen, Jie LIANG, Jaehyun Lee, Vihar Georgiev, Aida Todri | doi:10.4231/D3183448N

In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT interconnect performances and power consumption. Variabilities

Verilog-A implementation of the compact model for organic thin-film transistors oTFT

2015-06-16 12:26:13 | Compact Models | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.