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  1. Stanford 2D Semiconductor (S2DS) Transistor Model

    Stanford 2D Semiconductor (S2DS) Transistor Model

    2018-08-15 02:33:34 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

  2. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

    Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

    2018-08-15 02:33:04 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56

    The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

  3. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    2019-06-08 22:48:08 | Compact Models | Contributor(s): Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan | doi:10.21981/15GF-KX29

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

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  1. 2D FET
  2. 2D Semiconductor
  3. Dual Gate
  4. Dual-gate JFET
  5. ferroelectrics
  6. Integrated Circuit
  7. interconnect
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  9. Junction Field-Effect Transistor
  10. MoS2
  11. MoS2 Transistor
  12. NEEDS node
  13. PSPHV
  14. resistor
  15. self-heating effects
  16. SiC
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  18. SPICE
  19. Verilog-A
  20. Xyce - Parallel Electronic Simulation

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