Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1, Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

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Usage

World usage

Location of all "Intro to MOS-Capacitor Tool" Users Since Its Posting

Simulation Users

368

7 16 23 29 35 38 44 50 56 67 79 82 91 96 100 102 108 116 123 136 140 145 158 160 163 166 169 174 182 184 192 197 205 211 214 216 219 229 232 241 246 251 258 264 267 274 277 282 286 290 296 302 318 323 326 337 339 345 351 357 361 366 368

Users By Organization Type
Type Users
Unidentified 250 (67.93%)
Educational - University 108 (29.35%)
Industry 6 (1.63%)
National Lab 3 (0.82%)
Government Agency 1 (0.27%)
Users by Country of Residence
Country Users
us UNITED STATES 36 (38.71%)
in INDIA 32 (34.41%)
eg EGYPT 4 (4.3%)
cn CHINA 4 (4.3%)
bd BANGLADESH 3 (3.23%)
il ISRAEL 3 (3.23%)
ru RUSSIAN FEDERATION 3 (3.23%)
br BRAZIL 3 (3.23%)
es SPAIN 3 (3.23%)
de GERMANY 2 (2.15%)

Simulation Runs

1,297

132 151 58 66 77 84 97 109 120 167 237 262 334 345 353 356 374 393 426 473 483 495 553 561 573 578 583 599 630 636 654 666 682 704 719 726 731 754 783 810 834 856 888 910 925 966 980 1020 1038 1046 1066 1085 1146 1176 1186 1215 1217 1228 1242 1260 1271 1285 1297
Overview
Average Total
Wall Clock Time 3.94 hours 105.55 days
CPU time 5.43 seconds 58.17 minutes
Interaction Time 1.44 hours 38.46 days