Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

By Alex Grede

Rochester Institute of Technology

Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

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Version 1.2.3 - published on 21 Mar 2014

doi:10.4231/D35T3G059 cite this

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Usage

World usage

Location of all "Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization" Users Since Its Posting

Cumulative Simulation Users

352

2 17 25 30 32 37 40 44 49 52 56 57 58 65 69 73 77 80 82 84 87 87 89 96 100 104 112 114 117 117 140 144 150 153 160 172 181 185 188 191 192 206 209 211 218 236 240 245 252 252 263 264 266 266 269 273 280 288 292 296 304 308 317 321 323 325 326 328 329 332 333 334 336 338 341 345 347 347 349 351 352

Users By Organization Type
Type Users
Unidentified 295 (83.81%)
Educational - University 53 (15.06%)
Industry 2 (0.57%)
Unemployed 1 (0.28%)
Government Agency 1 (0.28%)
Users by Country of Residence
Country Users
us UNITED STATES 19 (38.78%)
in INDIA 14 (28.57%)
kr KOREA, REPUBLIC OF 4 (8.16%)
ru RUSSIAN FEDERATION 3 (6.12%)
ca CANADA 3 (6.12%)
cn CHINA 2 (4.08%)
es SPAIN 1 (2.04%)
se SWEDEN 1 (2.04%)
br BRAZIL 1 (2.04%)
tn TUNISIA 1 (2.04%)

Simulation Runs

1,163

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Overview
Average Total
Wall Clock Time 3.89 hours 101.83 days
CPU time 44.21 seconds 7.71 hours
Interaction Time 20.36 minutes 8.88 days