Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

By Alex Grede

Rochester Institute of Technology

Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

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Version 1.2.3 - published on 21 Mar 2014

doi:10.4231/D35T3G059 cite this

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