Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

By Alex Grede

Rochester Institute of Technology

Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

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Version 1.2.3 - published on 21 Mar 2014

doi:10.4231/D35T3G059 cite this

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World usage

Location of all "Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization" Users Since Its Posting

Simulation Users

329

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Users By Organization Type
Type Users
Unidentified 273 (82.98%)
Educational - University 52 (15.81%)
Industry 2 (0.61%)
Government Agency 1 (0.3%)
Unemployed 1 (0.3%)
Users by Country of Residence
Country Users
us UNITED STATES 19 (38.78%)
in INDIA 14 (28.57%)
kr KOREA, REPUBLIC OF 4 (8.16%)
ru RUSSIAN FEDERATION 3 (6.12%)
ca CANADA 3 (6.12%)
cn CHINA 2 (4.08%)
bd BANGLADESH 1 (2.04%)
tn TUNISIA 1 (2.04%)
ve VENEZUELA, BOLIVARIAN REPUBLIC OF 1 (2.04%)
es SPAIN 1 (2.04%)

Simulation Runs

1,100

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Overview
Average Total
Wall Clock Time 2.35 hours 54.9 days
CPU time 48.46 seconds 7.55 hours
Interaction Time 21.69 minutes 8.45 days