Electrostatic Properties Simulation of Layered 2D Material Devices

Simulate charge carrier density, potential drop and energy band diagram across any vertical 1D cross-section in a layered heterostructure of 2D semiconductors, graphene and metals.

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Version 1.01 - published on 02 May 2018

doi:10.4231/D3C24QQ39 cite this

Open source: license | download

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Usage

World usage

Location of all "Electrostatic Properties Simulation of Layered 2D Material Devices" Users Since Its Posting

Cumulative Simulation Users

418

15 30 47 61 70 92 108 117 138 153 166 190 207 224 237 258 265 272 278 284 292 302 317 330 338 363 381 397 411 418

Users By Organization Type
Type Users
Unidentified 377 (90.19%)
Educational - University 37 (8.85%)
National Lab 2 (0.48%)
Government Agency 2 (0.48%)
Users by Country of Residence
Country Users
in INDIA 11 (31.43%)
us UNITED STATES 11 (31.43%)
bd BANGLADESH 3 (8.57%)
cn CHINA 2 (5.71%)
es SPAIN 2 (5.71%)
ru RUSSIAN FEDERATION 2 (5.71%)
kz KAZAKHSTAN 1 (2.86%)
sa SAUDI ARABIA 1 (2.86%)
tw TAIWAN 1 (2.86%)
ir IRAN, ISLAMIC REPUBLIC OF 1 (2.86%)

Simulation Runs

1,514

40 85 174 212 263 351 383 410 491 582 654 706 746 826 872 919 931 948 960 972 1008 1033 1087 1134 1128 1235 1333 1361 1506 1514
Overview
Average Total
Wall Clock Time 2.37 hours 102.74 days
CPU time 12.09 minutes 8.73 days
Interaction Time 39.95 minutes 28.85 days