Electrostatic Properties Simulation of Layered 2D Material Devices

Simulate charge carrier density, potential drop and energy band diagram across any vertical 1D cross-section in a layered heterostructure of 2D semiconductors, graphene and metals.

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Version 1.01 - published on 02 May 2018

doi:10.4231/D3C24QQ39 cite this

Open source: license | download

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Usage

World usage

Location of all "Electrostatic Properties Simulation of Layered 2D Material Devices" Users Since Its Posting

Simulation Users

268

15 30 47 61 70 92 108 117 138 153 166 190 207 224 237 258 265 268

Users By Organization Type
Type Users
Unidentified 236 (88.06%)
Educational - University 28 (10.45%)
National Lab 2 (0.75%)
Government Agency 2 (0.75%)
Users by Country of Residence
Country Users
in INDIA 9 (33.33%)
us UNITED STATES 7 (25.93%)
bd BANGLADESH 3 (11.11%)
cn CHINA 2 (7.41%)
it ITALY 1 (3.7%)
sa SAUDI ARABIA 1 (3.7%)
tw TAIWAN 1 (3.7%)
es SPAIN 1 (3.7%)
ir IRAN, ISLAMIC REPUBLIC OF 1 (3.7%)
kr KOREA, REPUBLIC OF 1 (3.7%)

Simulation Runs

935

40 85 174 212 263 351 383 410 491 582 654 706 746 826 872 919 931 935
Overview
Average Total
Wall Clock Time 1.77 hours 39.86 days
CPU time 12.19 minutes 4.56 days
Interaction Time 52.12 minutes 19.51 days