Electrostatic Properties Simulation of Layered 2D Material Devices

Simulate charge carrier density, potential drop and energy band diagram across any vertical 1D cross-section in a layered heterostructure of 2D semiconductors, graphene and metals.

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Version 1.01 - published on 02 May 2018

doi:10.4231/D3C24QQ39 cite this

Open source: license | download

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Usage

World usage

Location of all "Electrostatic Properties Simulation of Layered 2D Material Devices" Users Since Its Posting

Cumulative Simulation Users

537

15 30 47 61 70 92 108 117 138 153 166 190 207 224 237 258 265 272 278 284 292 302 317 330 338 363 381 397 411 426 434 445 456 469 478 491 506 516 529 534 537

Users By Organization Type
Type Users
Unidentified 486 (90.5%)
Educational - University 45 (8.38%)
Government Agency 2 (0.37%)
National Lab 2 (0.37%)
Industry 2 (0.37%)
Users by Country of Residence
Country Users
us UNITED STATES 16 (36.36%)
in INDIA 13 (29.55%)
bd BANGLADESH 3 (6.82%)
cn CHINA 3 (6.82%)
ir IRAN, ISLAMIC REPUBLIC OF 2 (4.55%)
ru RUSSIAN FEDERATION 2 (4.55%)
es SPAIN 2 (4.55%)
sg SINGAPORE 1 (2.27%)
it ITALY 1 (2.27%)
kz KAZAKHSTAN 1 (2.27%)

Simulation Runs

2,162

40 85 174 212 263 351 383 410 491 582 654 706 746 826 872 919 931 948 960 972 1008 1033 1087 1134 1128 1235 1333 1361 1506 1525 1537 1558 1625 1668 1693 1725 1768 1888 2090 2154 2162
Overview
Average Total
Wall Clock Time 2.4 hours 177.52 days
CPU time 10.14 minutes 12.5 days
Interaction Time 34.12 minutes 42.03 days