Compact NEGF-Based Solver for Double-Gate MOSFETs

By Fabian Hosenfeld1; Alexander Kloes1

1. THM University of Applied Sciences

Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.

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Version 1.1 - published on 02 Dec 2020

doi:10.21981/DDVA-0459 cite this

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Location of all "Compact NEGF-Based Solver for Double-Gate MOSFETs" Users Since Its Posting

Cumulative Simulation Users

372

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Simulation Runs

1,365

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Average Total
Wall Clock Time 1.56 hours 102.79 days
CPU time 2.55 minutes 2.8 days
Interaction Time 21.89 minutes 24.03 days