MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Compact Models | Contributor(s):
By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1
1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)
We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...
https://nanohub.org/publications/181/?v=1
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Compact Models | Contributor(s):
By Wei Cao1, Kaustav Banerjee2
1. University of California Santa Barbara 2. University of California, Santa Barbara
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
https://nanohub.org/publications/51/?v=1