Resources (1-4 of 4)

1. ECE 606 L31.3: MOSFET Non-Idealities - Physics of Interface Traps

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

2. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

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   Online Presentations | 23 Dec 2008 | Contributor(s):: Ahmad Ehteshamul Islam, Muhammad A. Alam

   Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its...

3. On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

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   Online Presentations | 16 Dec 2009 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

   Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....

4. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

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   Online Presentations | 30 Jun 2008 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

   Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...