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Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ...
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Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
01 Jul 2008 | | Contributor(s):: Dragica Vasileska
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
25 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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Monte Carlo Method and Its Applications
29 Jan 2011 | | Contributor(s):: Dragica Vasileska
This book chapter describes the solution of the Boltzmann transport equation via the MC method and it also presents its application of various types of devices simulations.
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Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
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Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
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PREPRINT: Molecular Modeling of the Microstructure Evolution during the Carbonization of PAN-Based Carbon Fibers
23 Mar 2017 | | Contributor(s):: Alejandro Strachan, Saaketh Desai
PREPRINTDevelopment of high strength carbon fibers (CFs) requires an understanding of the relationship between the processing conditions, microstructure and resulting properties. We developed a molecular model that combines kinetic Monte Carlo (KMC) and molecular dynamics (MD) techniques to...