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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Simplified Band-Structure Model
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02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Solid-State Theory and Semiconductor Transport Fundamentals
Introduction to Computational Electronics
What Is Computational Electronics and Why Do We Need It?
Logic Devices and Circuits on Carbon Nanotubes
05 Apr 2006 | | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors...
ECE 659 Lecture 34: Non-Coherent Transport: Why does an Atom Emit Light?
16 Apr 2003 | | Contributor(s):: Supriyo Datta
Reference Chapter 10.1
ECE 659 Lecture 4: Charging/Coulomb Blockade
22 Jan 2003 | | Contributor(s):: Supriyo Datta
Reference Chapter 1.4 and 1.5
ECE 659 Lecture 3: The Quantum of Conductance
17 Jan 2003 | | Contributor(s):: Supriyo Datta
Reference Chapter 1.3
ECE 659 Lecture 1: Energy Level Diagram
16 May 2006 | | Contributor(s):: Supriyo Datta
Switching Energy in CMOS Logic: How far are we from physical limit?
24 Apr 2006 | | Contributor(s):: Saibal Mukhopadhyay
Aggressive scaling of CMOS devices in technology generation has resulted in exponential growth in device performance, integration density and computing power. However, the power dissipated by a silicon chip is also increasing in every generation and emerging as a major bottleneck to technology...
Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
20 Apr 2006 | | Contributor(s):: Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
11 Apr 2006 | | Contributor(s):: R. Fabian Pease
Nanotechnology comprises the techniques for making things small (<100 nm) — i.e., nanopatterning — and the resulting applications, ranging from the results of undirected nanopatterning such as Goretex, paint, and reactive gold nanoparticles, to those of directed nanopatterning such as...
Metal Oxide Nanowires: Synthesis, Characterization and Device Applications
07 Mar 2006 | | Contributor(s):: Jia Grace Lu
Various metal oxide nanowires, such as ZnO, SnO2, Fe2O3, In2O3 and Ga2O3, have been synthesized by chemical vapor deposition method. Their structures and properties are characterized by TEM, SEM, XRD, AFM, photoluminescence, photoconductance, scanning surface potential microscopy, and electrical...
Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)
13 Feb 2006 | | Contributor(s):: peide ye
Atomic layer deposition (ALD) is an emerging nanotechnology enables the deposit of ultrathin films, one atomic layer by one atomic layer. ALD provides a powerful, new capability to grow or regrow nanoscale ultrathin films of metals, semiconductors and insulators. This presentation introduces ALD...
A Primer on Semiconductor Device Simulation
23 Jan 2006 | | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...
Optimization of Transistor Design for Carbon Nanotubes
20 Jan 2006 | | Contributor(s):: Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported high-performanceCNTFET delivers a near ballistic on-current. The off-state, however, issignificantly degraded because the CNTFET operates like anon-conventional Schottky...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | | Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
Quantum Corrections for Monte Carlo Simulation
05 Jan 2006 | | Contributor(s):: Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semi-classical simulators by adding corrections for size quantization. Monte Carlo particle simulators are good candidates, because a...
Designing Nanocomposite Materials for Solid-State Energy Conversion
10 Nov 2005 | | Contributor(s):: Timothy D. Sands
New materials will be necessary to break through today's performance envelopes for solid-state energy conversion devices ranging from LED-based solid-state white lamps to thermoelectric devices for solid-state refrigeration and electric power generation. The combination of recent materials...
Designing Nanocomposite Thermoelectric Materials
08 Nov 2005 | | Contributor(s):: Timothy D. Sands
This tutorial reviews recent strategies for designing high-ZT nanostructured materials, including superlattices, embedded quantum dots, and nanowire composites. The tutorial highlights the challenges inherent to coupled electronic and thermal transport properties.