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IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys
25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth
In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.
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Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
30 Jun 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
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Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
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On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
16 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....
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On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
17 Feb 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....
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Spice3f4
14 Aug 2005 | | Contributor(s):: Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis