Resources (1-4 of 4)

1. NEGF theory of quantum photovoltaic devices

   Presentation Materials | 22 Sep 2011 | Contributor(s):: Urs Aeberhard

   Many high-efficiency photovoltaics concepts require an advanced control and manipulation of the optoelectronic properties of the active device structure, leading to a prominent role of low dimensional absorbers such as quantum wells, wires and dots in the implementation of these concepts....

2. Nanoelectronic Modeling Lecture 26: NEMO1D -

   Online Presentations | 09 Mar 2010 | Contributor(s):: Gerhard Klimeck

   NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness...

3. Quantum transport in semiconductor nanostructures

   Papers | 04 Mar 2010 | Contributor(s):: Tillmann Christoph Kubis

   PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

4. Scattering in NEGF: Made simple

   Papers | 09 Nov 2009 | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff

   Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...