Resources (1-13 of 13)

1. WHiTe Compact Models

   19 Mar 2023 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=12

2. Compact Model Vortex-STNO

   17 Nov 2022 | Compact Models | Contributor(s):

   By Sonal Shreya¹, Farshad Moradi¹

   Aarhus University, Denmark

   we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linearand...

   https://nanohub.org/publications/532/?v=1

3. WHiTe Compact Models

   14 Jun 2022 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=11

4. WHiTe Compact Models

   30 Oct 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=10

5. WHiTe Compact Models

   28 Aug 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=9

6. WHiTe Compact Models

   06 Aug 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=8

7. Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

   13 Jan 2021 | Compact Models | Contributor(s):

   By Lixia Han¹, Linlin Cai¹, Jinfeng Kang¹, Xiaoyan Liu¹, Peng Huang¹

   Peking University

   The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be...

   https://nanohub.org/publications/403/?v=1

8. WHiTe Compact Models

   01 Nov 2020 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=7

9. WHiTe (Wood-High-Temperature) Compact Models

   16 Apr 2020 | Compact Models | Contributor(s):

   By Neal Wood

   Toshiba Europe Limited

   This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

   https://nanohub.org/publications/339/?v=3

10. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    22 May 2019 | Compact Models | Contributor(s):

    By Francesco Maria Puglisi¹, Tommaso Zanotti¹, Paolo Pavan¹

    Università di Modena e Reggio Emilia

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

    https://nanohub.org/publications/289/?v=1

11. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad¹, Ujwal Radhakrishna², Dimitri Antoniadis¹

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...

    https://nanohub.org/publications/181/?v=1

12. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    07 Apr 2016 | Compact Models | Contributor(s):

    By Morteza Gholipour¹, Deming Chen²

    1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

    https://nanohub.org/publications/134/?v=1

13. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    06 Apr 2016 | Compact Models | Contributor(s):

    By Jorge-Daniel Aguirre Morales¹, Sébastien Frégonèse², Chhandak Mukherjee³, Cristell Maneux³, Thomas Zimmer³

    1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

    https://nanohub.org/publications/133/?v=1