A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the
non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the
effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion
of the device Hamiltonian in coupled mode-space. Simulation results are used to highlight quan-
tum effects and discuss the importance of scattering when examining the transport properties of
nanoscale transistors with differing channel access geometries. Additionally, an efficient domain
decomposition scheme for evaluating the performance of nanoscale transistors is also presented.
This paper highlights the importance of scattering in understanding the performance of transistors
with different channel access geometries.
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of so-called Büttiker probes. The double gate device geometry
permits an efficient mode space approach that dramatically lowers the computational
burden and permits use as a design tool. Also implemented for comparison are a ballistic
solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The
program is described and some examples of the use of nanoMOS for 10nm double gate
MOSFETs are presented.
19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
The nanoHUB Science Gateway
07 Mar 2006 | Online Presentations | Contributor(s): Sebastien Goasguen
The TeraGrid Science Gateways program was initiated to expand the influence of TeraGrid resources through back-end integration into community developed portals and desktop applications. Nancy Wilkins-Diehr, SDSC, TeraGrid Area Director for Science Gateways will give a brief overview of the program. We will then highlight work by four individual groups.
NanoMOS 2.5 Source Code Download
22 Feb 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel.