Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
Presentation Materials | 14 Dec 2015 | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors
Online Presentations | 04 Oct 2015 | Contributor(s): Shaloo Rakheja
In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...
The MVS Nanotransistor Model: A Case Study in Compact Modeling
Online Presentations | 26 Nov 2014 | Contributor(s): Shaloo Rakheja
In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model....
The Role of Graphene in Semiconductor Technologies
Online Presentations | 22 Jul 2014 | Contributor(s): Shaloo Rakheja
This talk examines the requirements and challenges that must be met for graphene electronics, and discuss possible solutions.
NEEDS Compact Model Release – Lessons Learned from MVS 1.0.0
Online Presentations | 10 Jan 2014 | Contributor(s): Shaloo Rakheja
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MVS Nanotransistor Model
01 Dec 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
MVS Nanotransistor Model (Silicon)
02 Dec 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M
MVS III-V HEMT model
01 Dec 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
01 Aug 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3QZ22J40
23 Oct 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3H12V82S
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