2014 NCN-NEEDS Summer School: Spintronics - Science, Circuits, and Systems
Top 1 shown
Magnetic Tunnel Junction Lab
Tools | 23 Sep 2013 | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Quantitative Model for TMR and Spin-transfer Torque in MTJ devices
Papers | 01 Sep 2013 | Contributor(s): Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta
We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ||) and (4)...
E3S Theme IV: Nanomagnetics eBook
Papers | 20 Jul 2020 | Contributor(s): Center for Energy Efficient Electronics Science, Jeffrey Bokor, Jyotirmoy Chatterjee, Sakhrat Khizroev, Xiang (Shaun) Li, Brayan Ricardo Navarrete, Akshay Pattabi, Shehrin Sayed, Sayeef Salahuddin, Dennis Toledo, Ingrid Torres, Shan X. Wang
This eBook was written by faculty, postdoctoral researchers, students, and staff of the Center for Energy Efficient Electronics Science (E3S), a Science and Technology Center funded by the U. S. National Science Foundation (Award 0939514). The Center is a consortium of five world-class academic...
Voltage Asymmetry of Spin-Transfer Torques
Papers | 02 Sep 2013 | Contributor(s): Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta
Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper,...
CMOS+X: Integrated Ferroelectric Devices for Energy Efficient Electronics
Online Presentations | 09 Dec 2022 | Contributor(s): Sayeef Salahuddin
In this talk, I shall briefly present how integrated ferroelectric devices offer a new pathway in this context. First, I shall discuss the phenomenon of negative capacitance in ferroelectric materials. A fundamentally new state in the ferroelectrics, negative capacitance promises to reduce...
Top 5 shown | See more results
MIT Virtual Source Negative Capacitance (MVSNC) model
27 Feb 2017 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T
MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.