Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)
Category
Published on
Abstract
Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.
Credits
The authors wish to thank Dr Leanne Henry and Kenneth Vaccaro of AFRL for their assistance with epitaxial growth and
Paul Nitishin of the MIT Lincoln Laboratory for facilitating the high resolution work.
Sponsored by
Financial support was provided by the US Air Force Palace Knight program.
Cite this work
Researchers should cite this work as follows: