ECE 612 Lecture 18B: CMOS Process Flow

By Mark Lundstrom

Purdue University

Published on

Abstract

For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.

This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.

Credits

The author is indebted to Dr. Lynn Fuller of Rochester Institute of Technology for making these materials available.

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "ECE 612 Lecture 18B: CMOS Process Flow," http://nanohub.org/resources/5855.

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Time

Location

EE 117, Purdue University, West Lafayette, IN

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