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MOSCap: First-Time User Guide

By SungGeun Kim1, Benjamin P Haley1, Gerhard Klimeck1

1. Purdue University

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Abstract

This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.

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References

  1. Dragica Vasileska (2008), "MOS Capacitors Description"
  2. Dragica Vasileska (2008), "MOSFET Operation Description"
  3. Mark Lundstrom (2008), "ECE 612 Lecture 3: MOS Capacitors"
  4. S.-H. Lo, et. al., IBM Journal of Research and Development, volume 43, number 3, 1999
  5. Deal B. E., Electron Devices, IEEE Transactions on, 1980
    PADRE
  6. Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/nanohub-r941.3.
  7. http://nanohub.org/site/resources/tools/padre/doc/index.html

Cite this work

Researchers should cite this work as follows:

  • SungGeun Kim; Benjamin P Haley; Gerhard Klimeck (2009), "MOSCap: First-Time User Guide," http://nanohub.org/resources/6546.

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