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Lecture 10: Interface Damage & Negative Bias Temperature Instability

By Muhammad Alam

Purdue University

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Category Online Presentations
Abstract Outline:
  • Background information
  • NBTI interpreted by R-D model
  • The act of measurement and observed quantity
  • NBTI vs. Light-induced Degradation
  • Possibility of Degradation-free Transistors
  • Conclusions
Cite this work

Researchers should cite this work as follows:

  • Muhammad A. Alam (2010), "Lecture 10: Interface Damage & Negative Bias Temperature Instability," http://nanohub.org/resources/7178.

    BibTex | EndNote

Time 10:30 AM, July 24, 2009
Location Beering Hall, Room 2280, Purdue University, West Lafayette, IN
Tags
  1. bottom up approach
  2. course lecture
  3. device physics
  4. devices
  5. iTunes U
  6. nanoelectronics
  7. reliability

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