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Lecture 10: Interface Damage & Negative Bias Temperature Instability

By Muhammad A. Alam

Purdue University

Published on

Abstract

Outline:
  • Background information
  • NBTI interpreted by R-D model
  • The act of measurement and observed quantity
  • NBTI vs. Light-induced Degradation
  • Possibility of Degradation-free Transistors
  • Conclusions

Cite this work

Researchers should cite this work as follows:

  • Muhammad A. Alam (2010), "Lecture 10: Interface Damage & Negative Bias Temperature Instability," http://nanohub.org/resources/7178.

    BibTex | EndNote

Time

Location

Beering Hall, Room 2280, Purdue University, West Lafayette, IN

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