Lecture 10: Interface Damage & Negative Bias Temperature Instability

Published on

Abstract

Outline:
  • Background information
  • NBTI interpreted by R-D model
  • The act of measurement and observed quantity
  • NBTI vs. Light-induced Degradation
  • Possibility of Degradation-free Transistors
  • Conclusions

Cite this work

Researchers should cite this work as follows:

  • Muhammad A. Alam (2010), "Lecture 10: Interface Damage & Negative Bias Temperature Instability," http://nanohub.org/resources/7178.

    BibTex | EndNote

Time

Location

Beering Hall, Room 2280, Purdue University, West Lafayette, IN

Tags

  1. nanoelectronics
  2. course lecture
  3. bottom up approach
  4. devices
  5. device physics
  6. reliability
  7. iTunes U