Tags: FinFET

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  1. 7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations

    23 Aug 2013 | Contributor(s):: Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy

    This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations. Device simulation data for constructing the lookup table model was generated using NEMO5 atomistic...

  2. Are there any clear advantages to either UTB SOI vs FinFet devices?

    Open | Responses: 1

    I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...

    http://nanohub.org/answers/question/934

  3. Finfet raw files needed

    Closed | Responses: 0

     

    Hello, I wanted to simulate these files using HSpice. I wanted to see the transfer characteristics for temperature variation. Unfortunately the look up table is designed in...

    http://nanohub.org/answers/question/1566

  4. how to decide device characteristic while designing a device?

    Closed | Responses: 0

    Hello,

    http://nanohub.org/answers/question/1652

  5. How to get a model file for FinFET  ???

    Closed | Responses: 0

    http://nanohub.org/answers/question/1146

  6. How to get the Finfet model library file for cadence for simulation ???

    Closed | Responses: 0

    http://nanohub.org/answers/question/1148

  7. Achintya Priydarshi

    http://nanohub.org/members/145038

  8. Asrulnizam Abd Manaf

    Dr. Asrulnizam bin Abd Manaf received the BEng in Electrical and Electronic Engineering from Toyohashi University of Technology, Japan in 2001. Then, he worked as electrical engineer at...

    http://nanohub.org/members/70293

  9. Contact Resistances in Trigate & FinFET Devices

    22 Mar 2016 | | Contributor(s):: Yann-Michel Niquet

    IWCE 2015 presentation.

  10. I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?

    Closed | Responses: 0

    http://nanohub.org/answers/question/1942

  11. keerti kumar korlapati

    http://nanohub.org/members/55518

  12. Mohamed Tarek Ghoneim

    Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...

    http://nanohub.org/members/77955

  13. MuGFET

    17 Jan 2008 | | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley

    Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

  14. MuGFET: First-Time User Guide

    28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck

    MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...

  15. Pankaj Kumar Pal

    http://nanohub.org/members/82565

  16. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

  17. Siratun Nabi Sirat

    http://nanohub.org/members/186995

  18. Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET

    25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna

    IWCE 2015 presentation.  Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are...

  19. Vivek Asthana

    http://nanohub.org/members/49925