Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations
23 Aug 2013 | Contributor(s):: Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy
This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations. Device simulation data for constructing the lookup table model was generated using NEMO5 atomistic...
Are there any clear advantages to either UTB SOI vs FinFet devices?
Open | Responses: 1
I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...
Finfet raw files needed
Closed | Responses: 0
Hello, I wanted to simulate these files using HSpice. I wanted to see the transfer characteristics for temperature variation. Unfortunately the look up table is designed in...
how to decide device characteristic while designing a device?
How to get a model file for FinFET ???
How to get the Finfet model library file for cadence for simulation ???
Asrulnizam Abd Manaf
Contact Resistances in Trigate & FinFET Devices
22 Mar 2016 | | Contributor(s):: Yann-Michel Niquet
IWCE 2015 presentation.
I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?
keerti kumar korlapati
Mohamed Tarek Ghoneim
17 Jan 2008 | | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
MuGFET: First-Time User Guide
out of 5 stars
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
Pankaj Kumar Pal
Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Siratun Nabi Sirat
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are...