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7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations
23 Aug 2013 | Downloads | Contributor(s): Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy
This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations....
Are there any clear advantages to either UTB SOI vs FinFet devices?
Open | Responses: 1
I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...
Finfet raw files needed
Closed | Responses: 0
Hello, I wanted to simulate these files using HSpice. I wanted to see the transfer characteristics for temperature variation. Unfortunately the look up table is designed in...
how to decide device characteristic while designing a device?
How to get a model file for FinFET ???
How to get the Finfet model library file for cadence for simulation ???
Asrulnizam Abd Manaf
Contact Resistances in Trigate & FinFET Devices
22 Mar 2016 | Online Presentations | Contributor(s): Yann-Michel Niquet
IWCE 2015 presentation.
keerti kumar korlapati
Mohamed Tarek Ghoneim
0.0 out of 5 stars
01 May 2008 | Tools | Contributor(s): SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
MuGFET: First-Time User Guide
28 Apr 2008 | Teaching Materials | Contributor(s): SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.
This document provides instructions on how to use MuGFET.
MuGFET users can use also the PROPHET or the PADRE tool. Either...
Pankaj Kumar Pal
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | Online Presentations | Contributor(s): Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future...