nanoHUB.org - Tags: MOS

This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

ECE 606 Lecture 32: MOS Electrostatics I

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19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 26: Schottky Diode II

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19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

Quantum and Thermal Effects in Nanoscale Devices

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18 Sep 2008 | | Contributor(s):: Dragica Vasileska

To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

ECE 612 Lecture 3: MOS Capacitors

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09 Sep 2008 | | Contributor(s):: Mark Lundstrom

Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

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16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

One-stop-shop for teaching semiconductor devices

MOSFET Exercise

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07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

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31 Jan 2008 | | Contributor(s):: David K. Ferry

Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...

Semiconductor Device Education Material

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28 Jan 2008 | | Contributor(s):: Gerhard Klimeck

This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

New Dimension in Performance: Harnessing 3D Integration Technology

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29 Nov 2007 | | Contributor(s):: Kerry Bernstein

Despite generation on generation of scaling, computer chips have remained essentially 2-dimensional. Improvements in on-chip wire delay, and in the total number of inputs and outputs has not been able to keep up with improvements to the transistor, and its getting harder and harder to hide it! 3D...

Introduction to nanoMOS

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02 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

Illinois Tools: MOCA

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28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

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