Tags: nanowires

Description

A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.

Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.

All Categories (1-20 of 160)

  1. 3 min Research Talk: Plasmonic Core-Multishell Nanowires for Optical Applications

    Online Presentations | 26 Sep 2019 | Contributor(s):: Raheem Carless

    ED lights and technology are being used more often in today’s society. Compared to traditional illumination they are far more reliable and efficient, in the sense that they last longer, are environmentally friendly, and most importantly, they reduce energy waste.

  2. 3D Topological Insulator Nanowire NEGF Simulation on GPU

    Downloads | 28 May 2015 | Contributor(s):: Gaurav Gupta

    This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

  3. Any models for nano crossbars?

    Q&A|Closed | Responses: 1

    I am looking for some kind of SPICE models for nano crossbars; specifically, some models for nanowires, nwfets, crosspoints. However, even though there are models for CNFETs, I could not find...

    https://nanohub.org/answers/question/350

  4. Changing parameter

    Q&A|Open | Responses: 1

    Dear all

    I notice the simulated device at this site is silicon-based device. I would like to simulate germanium nanowire FET. Could I do it by only changing the parameters which are...

    https://nanohub.org/answers/question/385

  5. formation of CNT

    Q&A|Open | Responses: 1

    Dear All,

    Would you please tell me why Carbon goes for Nanotubes whereas Silicon (and most other elements) prefer solid nanowires? Is there any dependence on the type of hybridization...

    https://nanohub.org/answers/question/615

  6. Germanium nanowire FET

    Q&A|Open | Responses: 1

    Dear Sir/ Madam

    Let me introduce myself first. My name is Simanullang. I am currently studying for master’s program. I am planning to do research on nanowire FET and I am going to...

    https://nanohub.org/answers/question/384

  7. Hallo Im a newbie! Can I simulate and modeling nanowire on Nanohub? Which properties I can simulate? Is there any tutorial how I can do this? Thank you

    Q&A|Closed | Responses: 1

    https://nanohub.org/answers/question/627

  8. How can we make the programming of nano wires ??????

    Q&A|Closed | Responses: 0

    How to create a nano wires by using oops

    https://nanohub.org/answers/question/519

  9. Matlab fit of back to back schottky diodes

    Q&A|Closed | Responses: 0

    Hi everybody,

    I am trying to fit I(V) curves for semiconducting nanowires contacted between two metallic electrodes.

    My main reference to do this is the following: https://nanohub.org/answers/question/1373

  10. The electrical field from the gate of CNFET can not affect the transistor.

    Q&A|Open | Responses: 2

    Hi all,

    I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...

    https://nanohub.org/answers/question/60

  11. Which tool can I used to do harmonic analysis of a ZnO nanowire?

    Q&A|Closed | Responses: 1

    I am trying to study the applied voltage-displacement relationship for a ZnO nanowire. In the end I want to find...

    https://nanohub.org/answers/question/67

  12. A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

    Online Presentations | 17 Jan 2006 | Contributor(s):: Mincheol Shin

    As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...

  13. A CNTFET-Based Nanowired Induction Two-Way Transducers

    Papers | 05 Sep 2012 | Contributor(s):: Rostyslav Sklyar

    A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...

  14. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    Papers | 30 Oct 2006 | Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...

  15. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  16. Abdelmalek Benkouider

    Over five years of experience in scientific research within academic institutes and industrial R&D departments, with strong theoretical and experimental skills in nanotechnology. Demonstrated...

    https://nanohub.org/members/83692

  17. Adrian Suteu

    Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts of...

    https://nanohub.org/members/175145

  18. Al-Amin Sheikh

    https://nanohub.org/members/160887

  19. Alternative Hitachi SEM Techniques

    Online Presentations | 13 May 2022

    Robert Passeri, Hitachi engineer, discusses STEM and low kV imaging techniques with the Hitachi SEM S4800.

  20. An Experimentalists’ Perspective

    Online Presentations | 19 Dec 2007 | Contributor(s):: Arunava Majumdar

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.