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Nanoscale Device Modeling: From MOSFETs to Molecules
Papers | 20 Sep 2006 | Contributor(s):: Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...
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Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Papers | 20 Sep 2006 | Contributor(s):: Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...
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Quantum Transport for Nanostructures
Papers | 17 Sep 2006 | Contributor(s):: Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or...
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Understanding Phonon Dynamics via 1D Atomic Chains
Online Presentations | 04 Apr 2006 | Contributor(s):: Timothy S Fisher
Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices. Despite the importance of phonons, rigorous understanding and inclusion of phonon dynamics in...
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Quantum Transport: Atom to Transistor (Spring 2004)
Courses | 23 May 2006 | Contributor(s):: Supriyo Datta
Spring 2004 Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Course Information Website The development of "nanotechnology" has made it possible to engineer materials and devices...
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Exploring Electron Transfer with Density Functional Theory
Online Presentations | 11 Jun 2006 | Contributor(s):: Troy Van Voorhis
This talk will highlight several illustrative applications of constrained density functionaltheory (DFT) to electron transfer dynamics in electronic materials. The kinetics of thesereactions are commonly expressed in terms of well known Marcus parameters (drivingforce, reorganization energy and...
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NanoMOS 3.0: First-Time User Guide
Online Presentations | 06 Jun 2006 | Contributor(s):: Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...
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Logic Devices and Circuits on Carbon Nanotubes
Online Presentations | 05 Apr 2006 | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors...
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Exploring New Channel Materials for Nanoscale CMOS
Papers | 21 May 2006 | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics,...
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Device Physics and Simulation of Silicon Nanowire Transistors
Papers | 20 May 2006 | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
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Nanowire
Tools | 19 May 2006 | Contributor(s):: Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
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Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
Online Presentations | 20 Apr 2006 | Contributor(s):: Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
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Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
Online Presentations | 13 Feb 2006 | Contributor(s):: Mark Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
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A Top-Down Introduction to the NEGF Approach
Online Presentations | 14 Jun 2004 | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
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Resonant Tunneling Diodes: an Exercise
Teaching Materials | 06 Jan 2006 | Contributor(s):: H.-S. Philip Wong
This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties...
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Fundamentals of Nanoelectronics (Fall 2004)
Courses | 01 Sep 2004 | Contributor(s):: Supriyo Datta, Behtash Behinaein
Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Welcome to the ECE 453 lectures. The development of "nanotechnology" has made it possible to engineer material and devices on a length...
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Notes on the Ballistic MOSFET
Papers | 08 Oct 2005 | Contributor(s):: Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...
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Bandstructure in Nanoelectronics
Online Presentations | 01 Nov 2005 | Contributor(s):: Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...
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Simple Theory of the Ballistic MOSFET
Online Presentations | 11 Oct 2005 | Contributor(s):: Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...
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Parallel Computing for Realistic Nanoelectronic Simulations
Online Presentations | 12 Sep 2005 | Contributor(s):: Gerhard Klimeck
Typical modeling and simulation efforts directed towards the understanding of electron transport at the nanometer scale utilize single workstations as computational engines. Growing understanding of the involved physics and the need to model realistically extended devices increases the complexity...