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ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | Teaching Materials | Contributor(s): Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Jul 12 2010
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 | Workshops
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015 | Downloads | Contributor(s): Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or...
Open | Responses: 1
>About the multi-electron picture you have been talking,
>I would like to know, if I put two electrons at the
>same time from the source to the channel rather than
de Broglie wavelength
Regarding our discussion yesterday, you mentioned that DeBroglie
wavelength in metals is approx. 1A. I...
Degeneracy factor for holes
You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is:
How to model electrical transport in large conductors?
Closed | Responses: 0
For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
How to model metal/source drain MOSFET in nanoscale device simulators?
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?
In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an I-V equation that is making it difficult for me to group terms. For instance, looking at...
A Tutorial for Nanoelectronics Simulation Tools
0.0 out of 5 stars
03 Jul 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Additional Tutorials on Selected Topics in Nanotechnology
29 Mar 2011 | Workshops | Contributor(s): Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the
2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | Papers | Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function...
AQME Advancing Quantum Mechanics for Engineers
Introduction to Advancing Quantum Mechanics for Engineers and Physicists
“Advancing Quantum Mechanics for Engineers” (AQME) toolbox is an assemblage of individually authored tools...
Archimedes, GNU Monte Carlo simulator
01 Apr 2009 | Tools | Contributor(s): Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...