Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Note: Results do not include pending, unpublished, and some private items.
Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
Ranking is calculated from a formula comprised of user reviews and usage data. Learn more ›
12 Jun 2013 | Notes | Contributor(s): Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
Are there any clear advantages to either UTB SOI vs FinFet devices?
Open | Responses: 1
I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear …
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
problem: electric field in oxide is not constant
Closed | Responses: 0
Hi all, I am new to MEDICI and currently simulating an SOI structure on it. Dimensions: gate oxide: 20nm, silicon film=100nm, Buried Oxide=400nm, channel length=300nm Problem is the plot of …
Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device …
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.
Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the …
Exercise: Basic Operation of n-Channel SOI Device
23 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students the basic operation of n-channel SOI devices.NSF
Illinois Tools: MOCA
28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.