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Homework 4 - SOI Device Modeling
Teaching Materials | 10 Sep 2024 | Contributor(s):: Dragica Vasileska
The objective of this Lab is for students to understand basic operation of an n-channel SOI device. Both FD and PD devices will be considered and the differences between them will be compared.
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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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Animesh Gupta
https://nanohub.org/members/193300
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JFETIDG Model for Independent Dual-Gate JFETs
19 Jul 2017 | Compact Models | Contributor(s):
By Colin McAndrew1, Kejun Xia1
NXP Semiconductors
JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...
https://nanohub.org/publications/173/?v=2
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Anitha Raj
https://nanohub.org/members/145685
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Ivan C R nascimento
https://nanohub.org/members/121504
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Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
Presentation Materials | 12 Jun 2013 | Contributor(s):: Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
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Are there any clear advantages to either UTB SOI vs FinFet devices?
Q&A|Open | Responses: 1
I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...
https://nanohub.org/answers/question/934
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Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
Online Presentations | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
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problem: electric field in oxide is not constant
Q&A|Closed | Responses: 0
Hi all,
I am new to MEDICI and currently simulating an SOI structure on it.
Dimensions: gate oxide: 20nm, silicon film=100nm, Buried Oxide=400nm, channel length=300nm
Problem is the plot...
https://nanohub.org/answers/question/363
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Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
Teaching Materials | 10 Aug 2009 | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...
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ECE 612 Lecture 25: SOI Electrostatics
Online Presentations | 08 Dec 2008 | Contributor(s):: Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.
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Quantum and Thermal Effects in Nanoscale Devices
Online Presentations | 18 Sep 2008 | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
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Exercise: Basic Operation of n-Channel SOI Device
Teaching Materials | 23 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students the basic operation of n-channel SOI devices.NSF
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Illinois Tools: MOCA
Tools | 28 Mar 2007 | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
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Najeeb ud din Hakim
https://nanohub.org/members/19401