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Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Contributor(s):: Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...
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Near-Equilibrium Transport: Fundamentals and Applications
Courses | 28 Jul 2011 | Contributor(s):: Mark Lundstrom
Engineers and scientists working on electronic materials and devices need a working knowledge of "near-equilibrium" (also called "linear" or "low-field") transport. The term "working knowledge" means understanding how to use theory in practice. Measurements...
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Lecture 1: Introduction to Near-equilibrium Transport
Online Presentations | 20 Jul 2011 | Contributor(s):: Mark Lundstrom
A short overview of the topics to be discussed in the following nine lectures in this short course on near-equilibrium transport.
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MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
Teaching Materials | 13 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.
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The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures
Online Presentations | 11 Jul 2011 | Contributor(s):: Zhores I. Alferov
It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum wells, quantum wires and quantum dots, currently comprise the object of investigation of two thirds of...
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The Elusive Spin Transistor
Online Presentations | 11 Apr 2011 | Contributor(s):: Supriyo Datta
This presentation is a short introductory tutorial on spin-transistors.
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Control of Spin Precession in a Datta-Das Transistor Structure
Online Presentations | 11 Apr 2011 | Contributor(s):: Hyun Cheol Koo
Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...
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Tutorial 4: Far-From-Equilibrium Quantum Transport
Courses | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
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Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
Online Presentations | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
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Electron Density in a Nanowire
Animations | 30 Jan 2011 | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
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Tunneling in an Nanometer-Scaled Transistor
Animations | 25 Jan 2011 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
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2010 NCN@Purdue Summer School: Electronics from the Bottom Up
Workshops | 18 Jan 2011
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
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Nanoelectronic Devices, With an Introduction to Spintronics
Courses | 09 Sep 2010 | Contributor(s):: Supriyo Datta, Mark Lundstrom
Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...
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Simulator for a T-stub transistor in a magnetic field
Tools | 12 Mar 2010 | Contributor(s):: Massimo Macucci
Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field
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Verification of the Validity of the BJT Tool
Teaching Materials | 22 Aug 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.
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2010 MNTL UIUC Symposium Lecture 1 - Milton Feng at 60 : The Metamorphosis of the Transistor into a Laser
Online Presentations | 23 Jul 2010 | Contributor(s):: Nick Holonyak, Jr
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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
Online Presentations | 08 Jul 2010 | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
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2010 Honorary Symposium for Professor Milton Feng at The Micro and Nano Technology Laboratory UIUC
Series | 19 Jul 2010 | Contributor(s):: Rashid Bashir, Andreas Cangellaris, Omar N Sobh
Symposium honoring Professor Milton Feng on his 60th birthday.
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Lecture 1b: Nanotransistors - A Bottom Up View
Online Presentations | 19 Jul 2010 | Contributor(s):: Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale...
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Analytical and Numerical Solution of the Double Barrier Problem
Teaching Materials | 28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...