The Carrier Statistics Lab in ABACUS demonstrates electron and hole-density distributions based on the Fermi-Dirac and Maxwell-Boltzmann equations. This tool shows the dependence of carrier density, density of states and occupation factor on temperature and fermi level. The user can choose between doped and undoped semi-conductors. silicon, germanium, and gallium arsenide can be studied as a function of doping or Fermi level, and temperature. The Carrier Statistics Lab is supported by a homework assignment in which students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and the phenomenon of freeze-out.
First time use of the tool is supported by: Carrier Statistics Lab: First-Time User Guide
Exercises:
- Exercise: MATLAB Tool Construction for Degenerate/Nondegenerate Semiconductors That Includes Partial Ionization of the Dopants
- Exercise: Dopants and Semiconductor Statistics
- Hall Effect - Theoretical Exercise
Carrier Statistics Lab Learning Materials - Comprehensive set of learning materials for the Carrier Statistics Lab.