High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling
14 Jan 2015 | Online Presentations | Contributor(s): Martin Claus
The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...
High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework
07 Jan 2015 | Online Presentations | Contributor(s): Martin Claus
The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...
Multi-Scale Modeling of Metal-CNT Interfaces
03 Nov 2015 | Online Presentations | Contributor(s): Martin Claus
IWCE 2015 presentation. the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...
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CCAM Compact Carbon Nanotube Field-Effect Transistor Model
27 Apr 2022 | Contributor(s): Michael Schroter, Manojkumar Annamalai, Max Haferlach, Martin Claus | doi:10.21981/5E9F-2S90
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
06 Oct 2015 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595
15 Jun 2015 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D34F1MK28