High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework

By Martin Claus

Electrical and Computer Engineering, Technische Universität Dresden, Dresden, Germany

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Abstract

Carbon nanotube (CNT) field-effect transistors (FETs) are promising candidates for future analog high-frequency (HF) applications, such as communication systems, due to the excellent intrinsic properties of CNTs. High carrier mobility, high carrier saturation velocity, good thermal stability and especially the inherent linearity of CNTFETs make them very attractive for analog applications. Linearity, i.e. a linear dependence of the output current on the input voltage, is a unique fundamental property of devices in which the current flow is restricted to one dimension. CNTs belong to this group of so called one-dimensional materials. At the circuit level, the device linearity should lead to very high spectral efficiencies, i.e. allowing higher data rates without the need for increased bandwidths.

So far, the predicted excellent device linearity has not been proven in experiments due to technological challenges. Thus, the question is, how does a CNTFET technology need to look like to give access to the aforementioned unique intrinsic properties of CNTFETs and to allow the realization of CNTFET-based HF circuits. The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special focus is put on a suitable description of the metal-CNT interfaces.

Bio

Martin Claus received his Dipl.-Ing. and Dr.-Ing. degree in electrical engineering in 2004 and 2011 from the Technische Universität Dresden (Germany). During his doctoral research, he investigated carbon nanotube field-effect transistors (FETs) with emphasis on modeling and simulation. His research interests include compact modeling and technology comparisons of nanoscale FETs using numerical device simulation, physical analysis, and electrical characterization. Since 2013, he has been research group leader of the Modeling Group for Emerging Electronics within the Center for Advancing Electronics Dresden (Cfaed) in Germany. Dr. Claus is responsible for the development of a multi-scale device simulation platform, experimental characterization and compact modeling for one- and two- dimensional devices. Cfaed is a Cluster of Excellence within the German Excellence Initiative. It brings together 200 researchers from eleven research institutions to address the advancement of electronic information processing systems by exploring new technologies that overcome the limits of today’s predominant CMOS technology.

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Cite this work

Researchers should cite this work as follows:

  • Martin Claus (2015), "High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework," https://nanohub.org/resources/21715.

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Location

Birck Nanotechnology Center, Rm 1001, Purdue University, West Lafayette, IN

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