1. JFETlab: An Online Simulation Tool for Double Gate long channel Symmetrical Si and 4H-SiC JFETs

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   Tools | 19 Dec 2016 | Contributor(s): Nikolaos Makris, Matthias Bucher, Farzan Jazaeri

   JFETlab is a simulation tool of static and dynamic electrical characteristics ( I-V, G-V, C-V ) of Si and 4H-SiC Junction Field Effect Transistors (JFETs) using temperature and channel concentration depedent material models.

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   EPFL HEMT MODEL

   25 Apr 2020 | Contributor(s): Farzan Jazaeri, Jean-Michel Sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris, Bertrand Parvais | doi:10.21981/PSE5-PP70

   The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.

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   EPFL HEMT MODEL

   14 Aug 2019 | Contributor(s): Farzan Jazaeri, jean-michel sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris | doi:10.21981/GPPJ-VP68

   The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.

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