ECE 612 Lecture 22: CMOS Process Steps
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Online Presentations | 04 Jan 2007 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 34: Heterostructure FETs
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CNTbands
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Tools | 14 Dec 2006 | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
ECE 612 Lecture 33: Heterojunction Bipolar Transistors
Online Presentations | 11 Dec 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 32: Heterojunction Diodes
Online Presentations | 08 Dec 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 31: Heterostructure Fundamentals
ECE 612 Lecture 29: SOI Electrostatics
Online Presentations | 04 Dec 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 28: Overview of SOI Technology
Online Presentations | 30 Nov 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 25: CMOS Circuits, Part I I
Online Presentations | 06 Nov 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 23: CMOS Process Flow
ECE 612 Lecture 24: CMOS Circuits, Part I
Online Presentations | 05 Nov 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 21: Gate resistance and Interconnects
Online Presentations | 02 Nov 2006 | Contributor(s): Mark Lundstrom
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
Papers | 30 Oct 2006 | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
Modeling of Nanoscale Devices
Papers | 19 Oct 2006 | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
Papers | 19 Oct 2006 | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
ECE 612 Lecture 20: MOSFET Leakage
Online Presentations | 18 Oct 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 19: Series Resistance
Online Presentations | 17 Oct 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
Papers | 06 Oct 2006 | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...
ECE 612 Lecture 16: 2D Electrostatics, Part II
Online Presentations | 02 Oct 2006 | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
Papers | 28 Sep 2006 | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...