nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
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Abstract
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of so-called Büttiker probes. The double gate device geometry
permits an efficient mode space approach that dramatically lowers the computational
burden and permits use as a design tool. Also implemented for comparison are a ballistic
solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The
program is described and some examples of the use of nanoMOS for 10nm double gate
MOSFETs are presented.
Cite this work
Researchers should cite this work as follows:
- Z. Ren, R. Venugopal, S. Goasguen, S. Datta and M. S. Lundstrom, "nanoMOS 2.5: A Two-Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," IEEE Trans. Electron. Dev., special issue on Nanoelectronics, 50, 1914-1925, 2003.