05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
Online Presentations | 18 Sep 2020 | Contributor(s): Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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