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Tight Binding Parameters by DFT mapping
12 Sep 2012 | Presentation Materials | Contributor(s): Yaohua Tan, Michael Povolotskyi, Tillmann Christoph Kubis, Yu He, Zhengping Jiang, Timothy Boykin, Gerhard Klimeck
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data,or critical...
NEMO5 Tutorial 6B: Device Simulation - Quantum Transport in GaSb/InAs Tunneling FET
16 Jul 2012 | Online Presentations | Contributor(s): Yu He
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