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  1. Stanford 2D Semiconductor (S2DS) Transistor Model

    Stanford 2D Semiconductor (S2DS) Transistor Model

    2018-08-15 02:33:34 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

  2. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

    Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

    2018-08-15 02:33:04 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56

    The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

  3. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    2015-03-25 17:05:28 | Compact Models | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

Popular Tags

  1. 2D FET
  2. 2D Semiconductor
  3. Circuit Simulation
  4. Dual-gate JFET
  5. ferroelectrics
  6. Integrated Circuit
  7. interconnect
  8. JFET
  9. Junction Field-Effect Transistor
  10. MoS2 Transistor
  11. NEEDS node
  12. PSPHV
  13. resistor
  14. RRAM
  15. self-heating effects
  16. SiC
  17. Silicon Carbide
  18. SPICE
  19. Verilog-A
  20. Xyce - Parallel Electronic Simulation

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