MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Cumulative Simulation Users

2,962

22 55 72 81 89 114 156 179 195 219 241 280 315 359 373 382 398 431 486 504 528 568 611 631 658 675 683 693 760 798 862 906 963 990 1,039 1,076 1,111 1,135 1,214 1,259 1,268 1,308 1,357 1,430 1,453 1,480 1,521 1,543 1,592 1,623 1,641 1,722 1,770 1,805 1,935 2,030 2,077 2,097 2,126 2,161 2,224 2,255 2,265 2,284 2,295 2,329 2,421 2,497 2,523 2,599 2,644 2,692 2,813 2,925 2,959 2,962

Users By Organization Type
Type Users
Unidentified 2,658 (89.74%)
Educational - University 290 (9.79%)
National Lab 6 (0.2%)
Industry 5 (0.17%)
Unemployed 2 (0.07%)
Government Agency 1 (0.03%)
Users by Country of Residence
Country Users
us UNITED STATES 109 (44.49%)
in INDIA 71 (28.98%)
bd BANGLADESH 13 (5.31%)
es SPAIN 10 (4.08%)
cn CHINA 9 (3.67%)
it ITALY 8 (3.27%)
kr KOREA, REPUBLIC OF 7 (2.86%)
de GERMANY 6 (2.45%)
my MALAYSIA 6 (2.45%)
ru RUSSIAN FEDERATION 6 (2.45%)

Simulation Runs

19,644

80 227 282 338 365 497 616 693 896 967 1058 1244 2009 2424 2488 2509 2549 2681 2848 2918 3011 3222 3513 4420 4587 4628 4662 4692 4937 5236 5420 5615 5891 5982 6240 7718 8011 8180 8782 8956 8996 9149 9526 10475 10624 10801 11539 11755 12083 12201 12258 13068 13395 13675 14843 15649 15972 16012 16192 16415 16560 16651 16671 16706 16728 16857 17246 17644 17715 18331 18306 18446 19127 19501 19639 19644
Overview
Average Total
Wall Clock Time 1.34 hours 809.36 days
CPU time 1.13 seconds 4.57 hours
Interaction Time 14.13 minutes 142.63 days