MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

Launch Tool

You must login before you can run this tool.

Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

View All Supporting Documents

Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

908

22 55 72 81 89 114 156 179 195 219 241 280 315 359 373 382 398 431 486 504 528 568 611 631 658 675 683 693 760 798 862 906 908

Users By Organization Type
Type Users
Unidentified 663 (73.02%)
Educational - University 235 (25.88%)
National Lab 4 (0.44%)
Industry 4 (0.44%)
Unemployed 2 (0.22%)
Users by Country of Residence
Country Users
us UNITED STATES 85 (43.15%)
in INDIA 57 (28.93%)
bd BANGLADESH 10 (5.08%)
es SPAIN 9 (4.57%)
cn CHINA 7 (3.55%)
it ITALY 7 (3.55%)
kr KOREA, REPUBLIC OF 7 (3.55%)
my MALAYSIA 6 (3.05%)
ru RUSSIAN FEDERATION 6 (3.05%)
de GERMANY 3 (1.52%)

Simulation Runs

6,198

80 227 282 338 365 497 616 693 896 967 1058 1244 2009 2424 2488 2509 2549 2681 2848 2918 3011 3222 3513 4489 4753 4802 4859 4902 5285 5727 5926 6185 6198
Overview
Average Total
Wall Clock Time 1.5 hours 256.84 days
CPU time 1.93 seconds 2.2 hours
Interaction Time 14.21 minutes 40.59 days