MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

1,801

22 55 72 81 89 114 156 179 195 219 241 280 315 359 373 382 398 431 486 504 528 568 611 631 658 675 683 693 760 798 862 906 963 990 1,039 1,076 1,111 1,135 1,214 1,259 1,268 1,308 1,357 1,430 1,453 1,480 1,521 1,543 1,592 1,623 1,641 1,722 1,770 1,801

Users By Organization Type
Type Users
Unidentified 1,519 (84.34%)
Educational - University 268 (14.88%)
National Lab 6 (0.33%)
Industry 5 (0.28%)
Unemployed 2 (0.11%)
Government Agency 1 (0.06%)
Users by Country of Residence
Country Users
us UNITED STATES 99 (43.23%)
in INDIA 67 (29.26%)
bd BANGLADESH 12 (5.24%)
es SPAIN 10 (4.37%)
cn CHINA 9 (3.93%)
kr KOREA, REPUBLIC OF 7 (3.06%)
it ITALY 7 (3.06%)
de GERMANY 6 (2.62%)
my MALAYSIA 6 (2.62%)
ru RUSSIAN FEDERATION 6 (2.62%)

Simulation Runs

13,653

80 227 282 338 365 497 616 693 896 967 1058 1244 2009 2424 2488 2509 2549 2681 2848 2918 3011 3222 3513 4420 4587 4628 4662 4692 4937 5236 5420 5615 5891 5982 6240 7718 8011 8180 8782 8956 8996 9149 9526 10475 10624 10801 11539 11755 12083 12201 12258 13068 13395 13653
Overview
Average Total
Wall Clock Time 1.21 hours 462.78 days
CPU time 1.27 seconds 3.24 hours
Interaction Time 13.53 minutes 86.05 days