This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width << Diffusion Length ) The NP Junction: Short-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of :

• Charge Density
• Electric Field Intensity
• Electrostatic Potential
• Excess Carrier Concentration
• Current Density
• Current Density Amplitude
• Depletion Width
• Max Excess Hole Concentration
• Max Excess Electrons Concentration
• Junction Capacitance
• 1 / C^2

• Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
• GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
• For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition

Researchers should cite this work as follows:

• Nahil Sobh, Mohamed Mohamed (2014), "Illinois Tools: NP Junction: Short-Base Depletion Approximation," https://nanohub.org/resources/npshortbasedda. (DOI: 10.4231/D3MS3K26M).

  BibTex | EndNote

1. depletion
2. depletion approximation
3. educational tool
4. nanoelectronics
5. np
6. np-junction
7. pn
8. pn-junction
9. short base