Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (1-20 of 2181)

  1. Shazan Ah Bhat


  2. Dinesh Ramkrushna Rotake

    Dinesh Rotake received the B.Sc.(Computer Science) and B.E. (Electronics) degree from Nagpur University, Nagpur, India, in 2004, 2009 respectively, the M.Tech degree in VLSI Design from G.H....


  3. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

  4. 39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed

    21 Sep 2020 | | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly

    This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...

  5. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

    18 Sep 2020 | | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

    We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

  6. 05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations

    18 Sep 2020 | | Contributor(s):: Shimeng Yu, Panni Wang

    Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...

  7. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

    18 Sep 2020 | | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

    In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

  8. Bandgap Manipulation of Armchair Graphene nanoribbon

    01 Sep 2020 | | Contributor(s):: Lance Fernandes

    Bandgap Manipulation is very important for various applications. Optical Devices need smaller Bandgap where as Diode's need larger Bandgap. Armchair graphene Nanoribbon (AGNR) has a special property where if the numbers of atoms are multiple of three or multiple of three plus one, they are...

  9. Nanocluster Irradiation Evolution Predictor

    20 May 2017 | | Contributor(s):: Didier Ishimwe, Matthew John Swenson, Janelle P Wharry

    Predict size evolution of solute nanoclusters in metallic alloys under irradiation.

  10. Matthew Weldon


  11. Gaussian Process Regression Model for Piezoelectric and Dielectric Constants in Gallium Nitride

    26 Sep 2019 | | Contributor(s):: Saswat Mishra, Karthik Guda Vishnu, Alejandro Strachan

    Gaussian Process Regression Model for Piezoelectric and Dielectric Constants in Gallium Nitride as a function of Strain and Aluminum doping

  12. Alexis V Miranda

    Masters student


  13. Faizus Salehin


  14. Carbon nanotubes and graphene nanoribbons

    This page provides links to various nanoHUB resources related to carbon nanotubes (CNT) and graphene nanoribbons (GNR). The CNTbands tool simulates CNT and GNR. This tutorial introduces various...


  15. Kirill Evgenevich Zhirnov





  17. Celdas Solares con Tintes Fotosensibles (Dye-Sensetized Solar Cells)

    16 Jun 2020 | | Contributor(s):: Nano-Link Center for Nanotechnology Education, Frank Fernandes, Rodfal Alberto Rodriguez (editor), María Teresa Rivera (editor)

    Este módulo trabaja con la fabricación de una celda solar con tinte fotosensible (“DSC”, por sus siglas en inglés). Una “DSC” es, esencialmente, una celda foto-electroquímica; significa que una reacción química foto-inducida...



  19. Girish Rughoobur

    Girish Rughoobur received his MEng in Electrical and Electronic Engineering from the University College London (UCL), UK in 2012, spending a year abroad at the California Institute of Technology...


  20. All-optical Magnetization Switching Mediated by Laser-induced Spin Current

    21 May 2020 | | Contributor(s):: Satoshi Iihama

    The manipulation of magnetization solely by the ultrashort laser pulse has attracted attention for future ultrafast and low-energy spintronics device [1-4]. GdFeCo has been predominant materials system showing all-optical single-shot magnetization switching. The magnetization switching of GdFeCo...