Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

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  1. Purdue Microelectronics and Nanotechnology Overview

    09 Sep 2021 | | Contributor(s):: Samantha Nelson, Muhammad Ashraful Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye

    In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...

  2. What's the mobility?

    08 Sep 2021 | | Contributor(s):: Eric Pop

    This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...

  3. Vema Reddy Bheeram

    Dr. Vema Reddy Bheeram earned his BS degree from Osmania University in 2011 and MS degree in Analytical Chemistry from GITAM University in 2015. He completed his PhD study on Influence of gamma...

    https://nanohub.org/members/337514

  4. GaN transistors - TTF

    Closed | Responses: 0

    Hello ,

     

     First of all , i would like to thank you for this valuable presantaion .

     

    i am doing a phd thisis that focus on GaN transistors...

    https://nanohub.org/answers/question/2497

  5. IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys

    25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth

    In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.

  6. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  7. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

    15 Jul 2021 | | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

    In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

  8. IWCN 2021: Quantum Transport Simulation on 2D Ferroelectric Tunnel Junctions

    15 Jul 2021 | | Contributor(s):: Eunyeong Yang, Jiwon Chang

    In this work, we consider a simple asymmetric structure of metal-ferroelectric-metal (MFM) FTJs with two different ferroelectric materials, Hf0.5Zr0.5O2(HZO) and CuInP2S6(CIPS), respectively. To investigate the performance of FTJs theoretically, we first explore complex band structures of HZO...

  9. IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels

    15 Jul 2021 | | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou

    In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.

  10. IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method

    15 Jul 2021 | | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...

  11. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

    15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

  12. IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices

    14 Jul 2021 | | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick

    The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...

  13. IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials

    14 Jul 2021 | | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis

    In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).

  14. IWCN 2021: A Practical Peierls Phase Recipe for Periodic Atomistic Systems Under Magnetic Fields

    14 Jul 2021 | | Contributor(s):: Alessandro Cresti

    In this contribution I will provide general ready-to-use formulas to determine Peierls phase factors that preserve the translation symmetry of any periodic quasi-one-dimensional or two-dimensional system under a homogeneous magnetic field.

  15. IWCN 2021: Recursive Open Boundary and Interfaces Method for Material Property Predictions

    14 Jul 2021 | | Contributor(s):: James Charles, Sabre Kais, Tillmann Christoph Kubis

    In this presentation, we show that assuming periodicity elevates a small perturbation of a periodic cell into a strong impact on the material property prediction. Periodic boundary conditions can be applied on truly periodic systems only. More general systems should apply an open boundary...

  16. Transistor Mania: Modeling Electron Flow

    17 Jun 2021 | | Contributor(s):: Meghan Saxer, NNCI Nano

    This activity is designed to help the students understand the significance of transistors in their lives. Students will learn how current research on nanoscale transistors is making their favorite electronic devices (i.e., cell phones, gaming devices, computers, etc.) faster and more powerful....

  17. SimTools: Delivering Simulations in the Era of Abundant Data

    04 Jun 2021 | | Contributor(s):: Alejandro Strachan

    This presentation introduces SimTool, a library that allows developers to create, publish, and share reproducible workflows with well-defined and verified inputs and outputs.

  18. FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers

    20 May 2021 | | Contributor(s):: Joan Redwing

  19. FDNS21: Revealing the Full Spectrum of 2D Materials with Superhuman Predictive Abilities

    20 May 2021 | | Contributor(s):: Evan Reed

  20. FDNS21: Van der Waals Epitaxy of Atomically Thin Metal Oxide

    20 May 2021 | | Contributor(s):: Lili Cai