
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ...

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3D: Part I  Models and Benchmarks
14 Jan 2008  Papers  Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantummechanical effects in the electronic states of the device but also the granular atomistic representation of...

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3D: Part II  Applications
14 Jan 2008  Papers  Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3D) has been discussed. Based on the atomistic valenceforce field and the sp3d5s* nearest neighbor tightbinding models, NEMO 3D enables the computation of strain and electronic structure in...

Quantum transport in semiconductor nanostructures
03 Mar 2010  Papers  Contributor(s): Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

Largescale first principles configuration interaction calculations of optical absorption in boron clusters
07 Mar 2012  Papers  Contributor(s): Ravindra L Shinde
We have performed systematic largescale allelectron correlated calculations on boron clustersBn (n=2–5), to study their linear optical absorption spectra. Several possible isomers of each cluster were considered, and their geometries were optimized at the coupledcluster singles doubles(CCSD)...

Neutron Induced Fission Betavoltaic Battery
10 Apr 2012  Papers  Contributor(s): Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, betadecaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. Neutrons produced by the chain reaction in the fissile radioisotope 8 are slowed down by the...

Exploring New Channel Materials for Nanoscale CMOS
21 May 2006  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, highk dielectrics, and...

Electrical Conduction through Molecules
08 Jul 2003  Papers  Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta
In recent years, several experimental groups have reported measurements of the currentvoltage (IV) characteristics of individual or small numbers of molecules. Even threeterminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as...

Multidimensional nanoscale device modeling: the finite element method applied to the nonequilibrium Green's function formalism
31 Oct 2006  Papers  Contributor(s): POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the NonEquilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006  Papers  Contributor(s): Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...