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Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=3
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Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...
https://nanohub.org/publications/248/?v=1
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Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=2
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UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Compact Models | Contributor(s):
By Wei Cao1, Kaustav Banerjee2
1. University of California Santa Barbara 2. University of California, Santa Barbara
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
https://nanohub.org/publications/51/?v=1
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Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=1