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1-D Phonon BTE Solver
Tools | 28 Jul 2014 | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
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ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
Tools | 15 May 2015 | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
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Acoustic Phonon Scattering Explained
Teaching Materials | 05 Feb 2011 | Contributor(s):: Dragica Vasileska
In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.
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Boltzmann Transport Equation and Scattering Theory
Teaching Materials | 29 Jan 2011 | Contributor(s):: Dragica Vasileska
In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.
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Bulk Monte Carlo: Implementation Details and Source Codes Download
Teaching Materials | 01 Jun 2010 | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
Papers | 25 Jun 2013 | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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Dibya Prakash Rai
https://nanohub.org/members/187116
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Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
Papers | 27 Jun 2013 | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
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ECE 656 Lecture 14: The Boltzmann Transport Equation
Online Presentations | 05 Oct 2011 | Contributor(s):: Mark Lundstrom
Outline:IntroductionEquation of motionThe BTESolving the s.s. BTEDiscussionSummary
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ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
Online Presentations | 11 Nov 2011 | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
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ECE 656 Lecture 41: Transport in a Nutshell
Online Presentations | 20 Dec 2011 | Contributor(s):: Mark Lundstrom
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Fundamentals of Current Flow
Papers | 30 Jan 2022 | Contributor(s):: Supriyo Datta
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...
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Generalized Monte Carlo Presentation
Teaching Materials | 17 Jun 2011 | Contributor(s):: Dragica Vasileska
This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steady-state velocity-field characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a non-parabolic bandstructure.
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Heeyuen Koh
https://nanohub.org/members/56621
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Introduction to Boltzmann Transport Equation
Teaching Materials | 28 Jun 2011 | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
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IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials
Online Presentations | 13 Jul 2021 | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis
In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).
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Lecture 7: The Boltzmann Transport Equation
Online Presentations | 16 Aug 2011 | Contributor(s):: Mark Lundstrom
Semi-classical carrier transport is traditionally described by the Boltzmann Transport Equation (BTE). In this lecture, we present theBTE, show how it is solved, and relate it to the Landauer Approach usedin these lectures
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Limitations of the BTE
Teaching Materials | 28 Jun 2011 | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
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Linearized Boltzmann transport calculator for thermoelectric materials
Tools | 11 Jul 2013 | Contributor(s):: Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation
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Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons
Online Presentations | 21 Oct 2016 | Contributor(s):: Kommini Adithya, Zlatan Aksamija
IWCE 2015 Presentation. We propose a novel approach to achieving a narrow window-shaped TDF through a combination of a step-like 2-dimensional density-of-states (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the step-like DOS creates a TDF which...