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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
0.0 out of 5 stars
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
24 Apr 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Series and Parallel
3.0 out of 5 stars
23 Apr 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
18 Apr 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
Why is capacitance a geometrical property?
Open | Responses: 2
We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?