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  1. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    07 Apr 2016 | Compact Models | Contributor(s):

    By Morteza Gholipour1, Deming Chen2

    1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

    https://nanohub.org/publications/134/?v=1

  2. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    out of 5 stars 

    24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  3. Impedance Adder

    out of 5 stars 

    28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

  4. Series and Parallel

    out of 5 stars 

    17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

  5. Circuit Elements

    out of 5 stars 

    17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

  6. ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation

    out of 5 stars 

    17 Sep 2008 | | Contributor(s):: Supriyo Datta

  7. ECE 612 Lecture 3: MOS Capacitors

    out of 5 stars 

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  8. Why is capacitance a geometrical property?

    Q&A|Open | Responses: 2

    We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?

    https://nanohub.org/answers/question/96

  9. nanoHUB-U: Fundamentals of Nanoelectronics - Part A: Basic Concepts, 2nd Edition

    Courses|' 04 Dec 2014

    Basic Concepts presents key concepts in nanoelectronics and mesoscopic physics and relates them to the traditional view of electron flow in solids.

    https://nanohub.org/courses/FON1