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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
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Impedance Adder
Tools | 28 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
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Series and Parallel
Tools | 17 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
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Circuit Elements
Tools | 17 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
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ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
Online Presentations | 17 Sep 2008 | Contributor(s):: Supriyo Datta
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ECE 612 Lecture 3: MOS Capacitors
Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.