Tags: device physics

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  1. Pooja Sharma

    https://nanohub.org/members/292172

  2. Saman Siddique

    https://nanohub.org/members/284365

  3. Mehedi Hossen Limon

    https://nanohub.org/members/265976

  4. MD YASIR BASHIR

    https://nanohub.org/members/264748

  5. Sai Praneet Toram

    https://nanohub.org/members/218955

  6. Saptam Ganguly

    https://nanohub.org/members/217245

  7. Hasantha Malavipathirana

    https://nanohub.org/members/206996

  8. Sebastian Jan Juchnowski

    https://nanohub.org/members/197883

  9. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  10. HIMANSHU KUMAR

    https://nanohub.org/members/187876

  11. CM Kaushik

    https://nanohub.org/members/141571

  12. Quantum Workshop III: LED Circuit and Device Physics

    07 Feb 2015 | Contributor(s):: Stella Quinones

    A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit.  Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...

  13. Leyla Başak Büklü

    https://nanohub.org/members/111486

  14. Shiv Gopal Yadav

    https://nanohub.org/members/104560

  15. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

    https://nanohub.org/members/101149

  16. Shailendra B

    A teacher in electronics engineering, for past 15 years. Interest in device physics, analog and digital systems.

    https://nanohub.org/members/90227

  17. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  18. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    25 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  19. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    25 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  20. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    26 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...