Tags: device physics

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  1. Taban Qayoom

    https://nanohub.org/members/333894

  2. Muhammad Aminul Haque Chowdhury

    https://nanohub.org/members/328958

  3. chq Zhang

    https://nanohub.org/members/309466

  4. Pooja Sharma

    https://nanohub.org/members/292172

  5. Saman Siddique

    https://nanohub.org/members/284365

  6. Mehedi Hossen Limon

    https://nanohub.org/members/265976

  7. MD YASIR BASHIR

    https://nanohub.org/members/264748

  8. Sai Praneet Toram

    https://nanohub.org/members/218955

  9. Saptam Ganguly

    https://nanohub.org/members/217245

  10. Hasantha Malavipathirana

    https://nanohub.org/members/206996

  11. Sebastian Jan Juchnowski

    https://nanohub.org/members/197883

  12. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  13. HIMANSHU KUMAR

    https://nanohub.org/members/187876

  14. CM Kaushik

    https://nanohub.org/members/141571

  15. Quantum Workshop III: LED Circuit and Device Physics

    07 Feb 2015 | Contributor(s):: Stella Quinones

    A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit.  Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...

  16. Leyla Başak Büklü

    https://nanohub.org/members/111486

  17. Shiv Gopal Yadav

    https://nanohub.org/members/104560

  18. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

    https://nanohub.org/members/101149

  19. Shailendra B

    A teacher in electronics engineering, for past 15 years. Interest in device physics, analog and digital systems.

    https://nanohub.org/members/90227

  20. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.