Tags: device physics

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  1. Taban Qayoom

    https://nanohub.org/members/333894

  2. Muhammad Aminul Haque Chowdhury

    https://nanohub.org/members/328958

  3. Pooja Sharma

    https://nanohub.org/members/292172

  4. Saman Siddique

    https://nanohub.org/members/284365

  5. Mehedi Hossen Limon

    https://nanohub.org/members/265976

  6. MD YASIR BASHIR

    https://nanohub.org/members/264748

  7. Sai Praneet Toram

    https://nanohub.org/members/218955

  8. Saptam Ganguly

    https://nanohub.org/members/217245

  9. Hasantha Malavipathirana

    https://nanohub.org/members/206996

  10. Sebastian Jan Juchnowski

    https://nanohub.org/members/197883

  11. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  12. HIMANSHU KUMAR

    https://nanohub.org/members/187876

  13. CM Kaushik

    https://nanohub.org/members/141571

  14. Quantum Workshop III: LED Circuit and Device Physics

    07 Feb 2015 | Contributor(s):: Stella Quinones

    A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit.  Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...

  15. Leyla Başak Büklü

    https://nanohub.org/members/111486

  16. Shiv Gopal Yadav

    https://nanohub.org/members/104560

  17. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

    https://nanohub.org/members/101149

  18. Shailendra B

    A teacher in electronics engineering, for past 15 years. Interest in device physics, analog and digital systems.

    https://nanohub.org/members/90227

  19. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  20. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    25 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...