Intro to MOS-Capacitor Tool

09 Jan 2013 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and …

https://nanohub.org/resources/16484

Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

28 Jun 2013 | Publications | Contributor(s): Himadri Pal

III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can …

https://nanohub.org/resources/18697

III-V Nanoscale MOSFETS: Physics, Modeling, and Design

28 Jun 2013 | Publications | Contributor(s): Yang Liu

As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are …

https://nanohub.org/resources/18694

Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

28 Jun 2013 | Publications | Contributor(s): Siyu Koswatta

Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices …

https://nanohub.org/resources/18707

Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

28 Jun 2013 | Publications | Contributor(s): raseong kim

For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving …

https://nanohub.org/resources/18690

Quantum and Atomistic Effects in Nanoelectronic Transport Devices

28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for …

https://nanohub.org/resources/18705

Carbon Nanotube Electronics: Modeling, Physics, and Applications

28 Jun 2013 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can …

https://nanohub.org/resources/18742

Computational and Experimental Study of Transport in Advanced Silicon Devices

28 Jun 2013 | Publications | Contributor(s): Farzin Assad

In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to …

https://nanohub.org/resources/18769

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

28 Jun 2013 | Publications | Contributor(s): Kausar Banoo

Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can …

https://nanohub.org/resources/18767

Nanoscale MOSFETS: Physics, Simulation and Design

28 Jun 2013 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate …

https://nanohub.org/resources/18763

Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

28 Jun 2013 | Publications | Contributor(s): Carl R. Huster

For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive …

https://nanohub.org/resources/18765

Landauer Approach to Thermoelectrics

23 Jun 2013 | Publications | Contributor(s): Changwook Jeong

Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material …

https://nanohub.org/resources/18681

ECE 606 Lecture 27: Looking Back and Looking Forward

20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/16122

ECE 606 Lecture 26: The Future of Computational Electronics

20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

https://nanohub.org/resources/16121

ECE 606 Lecture 21: MOS Electrostatics

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15976

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15977

ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15978

ECE 606 Lecture 24: MOSFET Non-Idealities

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15979

ECE 606 Lecture 20: Heterojunction Bipolar Transistor

17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15715