Tags: device physics

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  1. Sai Praneet Toram

    https://nanohub.org/members/218955

  2. Saptam Ganguly

    https://nanohub.org/members/217245

  3. Sebastian Jan Juchnowski

    https://nanohub.org/members/197883

  4. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  5. HIMANSHU KUMAR

    https://nanohub.org/members/187876

  6. CM Kaushik

    https://nanohub.org/members/141571

  7. Quantum Workshop III: LED Circuit and Device Physics

    07 Feb 2015 | Contributor(s):: Stella Quinones

    A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit.  Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...

  8. Leyla Başak Büklü

    https://nanohub.org/members/111486

  9. Shiv Gopal Yadav

    https://nanohub.org/members/104560

  10. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

    https://nanohub.org/members/101149

  11. Shailendra B

    A teacher in electronics engineering, for past 15 years. Interest in device physics, analog and digital systems.

    https://nanohub.org/members/90227

  12. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  13. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    25 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  14. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    25 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  15. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    26 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  16. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    25 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

  17. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    26 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

  18. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    27 Jun 2013 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  19. Computational and Experimental Study of Transport in Advanced Silicon Devices

    27 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  20. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    27 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...