Mehedi Hossen Limon
MD YASIR BASHIR
Sai Praneet Toram
Sebastian Jan Juchnowski
Quantum Workshop III: LED Circuit and Device Physics
07 Feb 2015 | Contributor(s):: Stella Quinones
A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit. Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...
Leyla BaÅŸak BÃ¼klÃ¼
Shiv Gopal Yadav
Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
25 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
25 Jun 2013 | | Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
26 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...