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Radiation Enabled Model Development and Validation
08 Mar 2024 | | Contributor(s):: Jeffrey S. Kauppila
This lecture will discuss techniques and methods for modeling single-event radiation effects at the transistor and circuit level. The lecture will also cover topics related to the validation of models using test data from custom on-chip measurement techniques developed over the last decade.
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SCALE Total Ionizing Dose Response Mechanisms in a 12-nm FinFET Technology
21 Feb 2024 | | Contributor(s):: Hugh Barnaby
This talk was also presented at the 2024 Microelectronics Reliability and Qualification Workshop, The Aerospace Corporation, El Segundo, CA, February, 6, 2024.
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Moore's Law and Radiation Effects on Microelectronics
03 Oct 2023 | | Contributor(s):: Daniel M. Fleetwood
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SCALE Ion-Induced Stuck Bits in 5 nm Bulk FinFET SRAMs at High Fluences
19 Sep 2023 | | Contributor(s):: Yoni Xiong
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ECE 606 L32.3: Modern MOSFET - Control of Threshold Voltage
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L32.4: Modern MOSFET - Mobility Enhancement
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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EOLAS NEGF Transport Simulator
18 May 2021 | | Contributor(s):: Alfonso Sanchez, Thomas Kelly
Effective-mass / NEGF simulator for electronic transport in Si nanostructures
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nanoHUB MuGFET Tool Tutorial
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
This is a basic tutorial on how to use the nanohub MuGFET tool to simulate FinFET or double gate model free of cost.
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Concept of FinFET Part-I
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
Here is the video introducing latest transistor technology used in processors.
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Concept of FinFET Part-II
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
Here is the video introducing latest transistor technology used in processors.
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Short Course on FinFET Simulation using MuGFET
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
This short course present how to use nanohub MuGFET tool to simulate FinFET or double gate model. It provides a short background on FinFET followed by instructions on how to use the MuGFET tool for the FinFET simulation.
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A Single Atom Transistor: The Ultimate Scaling Limit – Entry into Quantum Computing
14 Oct 2020 | | Contributor(s):: Gerhard Klimeck
50th European Solid-State Device Research Conference
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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Neilalohith Sharma
https://nanohub.org/members/257041
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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
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Siratun Nabi Sirat
https://nanohub.org/members/186995
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I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1942
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Achintya Priydarshi
https://nanohub.org/members/145038
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Contact Resistances in Trigate & FinFET Devices
22 Mar 2016 | | Contributor(s):: Yann-Michel Niquet
IWCE 2015 presentation.
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Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential....