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Electronic Structure and Transport Properties of Graphene on Hexagonal Boron Nitride
06 Dec 2018 | Contributor(s):: Shukai Yao, Luis Regalado Bermejo, Alejandro Strachan
Graphene is a zero-bandgap conductor with high carrier mobility. It is desired to search for an opening of band structure of graphene such that this kind of material can be applied in electronic devices. Depositing hexagonal Boron Nitride (h-BN) opens a bandgap in the band structure of...
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A Comparative Study of nanoHUB Tools for the Simulation of Carbon-based FETs
Presentation Materials | 03 Sep 2015 | Contributor(s):: Jose M. de la Rosa
This work compares the different tools available in nanoHUB for the electrical simulation of carbon- based field-effect transistors made up of either carbon nanotubes (CNTs) or graphene. ...
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Tunnel FET Learning Tutorial
Presentation Materials | 05 Mar 2014 | Contributor(s):: Mark Cheung
This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results
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Low Bias Transport in Graphene: An Introduction (lecture notes)
Presentation Materials | 22 Sep 2009 | Contributor(s):: Mark Lundstrom, tony low, Dionisis Berdebes
These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 20-24, 2009.