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Florida Ferroelectric Tunnel Junction Device Model
09 Sep 2020 | Compact Models | Contributor(s):
By Tong Wu1, Jing Guo1
University of Florida
A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.
https://nanohub.org/publications/375/?v=1
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Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
https://nanohub.org/publications/134/?v=1
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Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
06 Apr 2016 | Compact Models | Contributor(s):
By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
https://nanohub.org/publications/133/?v=1