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Esteve Amat
https://nanohub.org/members/52897
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How to use PMI Models in Sentaurus TCAD simulator?
Q&A|Closed | Responses: 0
Hello everyone.
I am looking for a guide (detailed if possible) on how to use Physical Model Interface (PMI) user field in Sentaurus Sdevice.
The specific problem is: how to...
https://nanohub.org/answers/question/2332
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Introduction to Reliability
Generalized Reliability Model
A Blind Fish in a River with a Waterfall
Many reliability problems are activated by a threshold. If this threshold value is exceeded, some phenomenons are...
https://nanohub.org/wiki/IntroductiontoReliability
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IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys
25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth
In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.
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Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
30 Jun 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
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Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
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Negative Bias Temperature Instability (NBTI)
Courses|'
22 Nov 2016
In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS...
https://nanohub.org/courses/NBTI
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On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
16 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....
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On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
17 Feb 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....
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Siting Liu
https://nanohub.org/members/60600
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Spice3f4
14 Aug 2005 | | Contributor(s):: Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis